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| TO-220 Plastic Package Boca Semiconductor Corp. BSC 2N6121, 6122, 6123 2N6124, 6125, 6126 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. N L O 12 3 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 A O ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 1.5 A; IB = 0.15 A D.C. current gain IC = 1.5 A; VCE = 2 V VCBO VCEO IC Ptot Tj VCEsat hFE 6121 6122 6123 6124 6125 6126 max. 45 60 80 max. 45 60 80 max. 4.0 max. 40 max. 150 max. min. 25 max. 100 0.6 25 100 20 80 V V A W C V RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO All dimin sions in mm. K 6121 6122 6123 6124 6125 6126 max. 45 60 80 max. 45 60 80 max. 5.0 V V V http://www.bocasemi.com page: 1 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 Collector current IC Collector current (Peak) ICM Base current IB Total power dissipation up to TC = 25C Ptot Derate above 25C Junction temperature Tj Storage temperature Tstg THERMAL RESISTANCE From junction to case CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 45 V IB = 0; VCE = 60 V IB = 0; VCE = 80 V VEB(off) = 1.5 V; VCE = 45 VEB(off) = 1.5 V; VCE = 60 VEB(off) = 1.5 V; VCE = 85 VEB(off) = 1.5 V; VCE = 45 VEB(off) = 1.5 V; VCE = 60 VEB(off) = 1.5 V; VCE = 80 mA IE = 0; VCB = 45 V IE = 0; VCB = 60 V IE = 0; VCB = 80 V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 100 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 1.5 A; IB = 0.15 A IC = 4 A; IB = 1.0 A Base-emitter on voltage IC = 1.5 A; VCE = 2 V D.C. current gain IC = 1.5 A; VCE = 2 V Rth j-c max. max. max. max. max. max. 4.0 7.0 1.0 40 320 150 -65 to +150 3.12 A A A W mW /C C C C/W 6121 6122 6123 6124 6125 6126 max. 1.0 - max. - 1.0 max. - - max. 0.1 - max. - 0.1 max. - - ICEX max. 2.0 ICEX max. - ICEX max. - max. 0.1 max. - max. - max. min. 45 min. 45 min. max. max. max. min. 25 max. 100 min. 10 min. min. - 0.1 - 1.0 60 60 5.0 0.6 1.4 1.2 25 100 10 25 2.5 MHz 20 80 7.0 80 80 - - 1.0 - - 0.1 - 2.0 - mA mA mA mA mA mA - mA - mA 2.0 V V V V; V; V; ICEO ICEO ICEO ICEX ICEX ICEX T C = 125C T C = 125C T C = 125C ICBO ICBO ICBO IEBO VCEO(sus)* VCBO VEBO VCEsat* VCEsat* VBE(on)* hFE* hFE* hfe fT - mA - mA 0.1 mA mA V V V V V V IC = 4 A; VCE = 2 V Small signal current IC = 0.1 A; VCE = 2 V; f = 1.0 KHz Transition frequency at f = 1 MHz IC = 1 A; VCE = 4 V * Pulse test: pulse width 300 s; duty cycle 2%. http://www.bocasemi.com page: 2 |
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